IRFP250 transistor equivalent, n-channel mosfet transistor.
*Low drain-source on-resistance:
RDS(ON) ≤85mΩ @VGS=10V
*Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
*100% avalanche tested
*Minimum Lot-t.
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